feb.1999 mitsubishi semiconductor triac ? BCR16UM medium power use insulated type, glass passivation type BCR16UM application light dimmer i t (rms) ...................................................................... 16a v drm ..............................................................400v/600v i fgt ! , i rgt ! , i rgt # ........................................... 15ma v iso ........................................................................ 1500v symbol v drm v dsm parameter repetitive peak off-state voltage ] 1 non-repetitive peak off-state voltage ] 1 voltage class unit v v maximum ratings 8 400 500 12 600 720 ] 1. gate open. symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg v iso parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight isolation voltage conditions commercial frequency, sine full wave 360 conduction, t c =79 c ] 3 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value t a =25 c, ac 1 minute, t 1 t 2 g terminal to case unit a a a 2 s w w v a c c g v ratings 16 170 121 5 0.5 10 2 C40 ~ +125 C40 ~ +125 2.3 1500 type name voltage class ] measurement point of case temperature outline drawing dimensions in mm to-220 a a a t 1 terminal t 2 terminal gate terminal ] 4.5 2.54 2.54 1.27 0.6 10.2 0.8 1.4 f 3.8 0.2 2.6 0.4 13.0 min 4.2 max 15.5 2.8 0.2 4.5
feb.1999 mitsubishi semiconductor triac ? BCR16UM medium power use insulated type, glass passivation type symbol i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-c) test conditions t j =125 c, v drm applied t c =25 c, i tm =25a, instantaneous measurement t j =25 c, v d =6v, r l =6 w , r g =330 w t j =25 c, v d =6v, r l =6 w , r g =330 w t j =125 c, v d =1/2v drm junction to case ] 3 ] 4 unit ma v v v v ma ma ma v c/w typ. parameter repetitive peak off-state current on-state voltage gate trigger voltage ] 2 gate trigger current ] 2 gate non-trigger voltage thermal resistance ! @ # ! @ # electrical characteristics ] 2. measurement using the gate trigger characteristics measurement circuit. ] 3. case temperature is measured at the t 2 terminal 1.5mm away from the molded case. ] 4. the contact thermal resistance r th (c-f) in case of greasing is 1.0 c/w. limits min. 0.2 max. 2.0 1.5 1.5 1.5 1.5 15 15 15 2.5 performance curves 10 0 23 5710 1 80 60 40 20 23 5710 2 44 100 120 140 160 180 200 0 4.4 0.4 1.2 2.4 3.2 0.8 1.6 2.0 2.8 3.6 4.0 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t j = 125? t j = 25? maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz)
feb.1999 mitsubishi semiconductor triac ? BCR16UM medium power use insulated type, glass passivation type 23 10 2 5710 3 3.2 0 23 10 ? 5710 0 23 5710 1 23 5710 2 1.6 1.2 0.8 0.4 2.0 2.4 2.8 10 1 10 3 7 5 3 2 ?0 ?0 20 10 2 7 5 3 2 60 100 140 4 4 ?0 0 40 80 120 typical example 10 1 10 3 7 5 3 2 ?0 ?0 20 10 2 7 5 3 2 60 100 140 4 4 ?0 0 40 80 120 typical example 10 12 10 8 40 30 25 15 5 0 20 0 20 35 24 6141618 360 conduction resistive, inductive loads 40 12 10 8 160 120 100 60 20 0 20 0 80 140 24 6141618 curves apply regardless of conduction angle 360 conduction resistive, inductive loads maximum on-state power dissipation on-state power dissipation (w) rms on-state current ( a ) allowable case temperature vs. rms on-state current case temperature ( c) rms on-state current ( a ) maximum transient thermal impedance characteristics (junction to case) transient thermal impedance ( c/ w) conduction time (cycles at 60hz) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature ( c) gate trigger voltage vs. junction temperature junction temperature ( c) gate characteristics 100 (%) gate trigger current (t j = t c) gate trigger current (t j = 25 c) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 c ) 10 ? 23 10 1 5710 2 23 5710 3 23 5710 4 10 1 7 5 3 2 10 0 7 5 3 2 7 5 3 2 v gt = 1.5v p g(av) = 0.5w v gm = 10v p gm = 5w i gm = 2a i fgt i , i rgt i , i rgt iii v gd = 0.2v
feb.1999 mitsubishi semiconductor triac ? BCR16UM medium power use insulated type, glass passivation type 140 40 ?0 ?0 ?0 0 20 60 80 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 typical example laching current vs. junction temperature laching current (ma) junction temperature (?) allowable ambient temperature vs. rms on-state current ambient temperature (?) rms on-state current (a) allowable ambient temperature vs. rms on-state current ambient temperature (?) rms on-state current (a) repetitive peak off-state current vs. junction temperature junction temperature (?) breakover voltage vs. junction temperature junction temperature (?) holding current vs. junction temperature junction temperature (?) 10 1 10 3 7 5 3 2 10 2 7 5 3 2 4 4 140 40 ?0 ?0 ?0 0 20 60 80 100 120 typical example 40 12 10 8 160 120 100 60 20 0 20 0 80 140 24 6141618 60 60 t2.3 120 120 t2.3 100 100 t2.3 natural convection all fins are black painted aluminum and greased curves apply regardless of conduction angle 160 120 100 60 20 0 3.2 1.6 0 0.8 1.2 2.0 2.4 2.8 40 80 140 0.4 natural convection no fins curves apply regardless of conduction angle resistive, inductive loads 160 ?0 0 40 80 120 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t 2 + , g e typical example t 2 + , g + t 2 e , g e y t typical example distribution 160 100 80 40 20 0 140 40 ?0 ?0 ?0 0 20 60 80 140 100120 60 120 typical example 100 (%) holding current ( t j = t c ) holding current ( t j = 25 ? ) 100 (%) repetitive peak off-state current ( t j = t c ) repetitive peak off-state current ( t j = 25 ? ) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 ? )
feb.1999 mitsubishi semiconductor triac ? BCR16UM medium power use insulated type, glass passivation type breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/?) 100 (%) breakover voltage ( dv/dt = xv/? ) breakover voltage ( dv/dt = 1v/? ) gate trigger current vs. gate current pulse width gate current pulse width (?) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 4 4 44 i fgt i i rgt i i rgt iii typical example t j = 25? 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 # 2 # 1 typical example t j = 125? i quadrant iii quadrant 6 w 6 w 6 w 6v 6v 6v r g r g r g a v a v a v test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits
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